DSEE55-24N1F
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
IFSM
IR
A
V
800
IFAV
A
VF
2.45
RthJC
0.60 K/W
VR
=
1200
1
3
5
min.
60
t = 10 ms
(50 Hz), sine
Applications:
VRRM
V
1200
V°C=
25
1
mA
TVJ
TVJ
=mA150
4
°C
Package:
Part number
VR
=
1200
TVJ
=°C25
IF
=A60
V
TC
=
110°C
rectangular 0.5d =
Ptot
250 W
TC
=
25
°C
TVJ
175 °C
-55
VRRM
=
IFAV
=
1200
V
60
A
TVJ
=
45°C
DSEE55-24N1F
V
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.90
TVJ
=25
°C
CJ
junction capacitance
V = V; TR
600 pFf = 1 MHz = °CVJ
25
VF0
V
0.97
TVJ
=
175°C
rF
6.8
m?
V
1.56
TVJ
=°C150
IF
=A60
V
2.00
IF
=A120
IF
=A120
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
35 A
TVJ
=°C25
reverse recovery time
A
60
75
220
ns
trr
=
40 ns
●
Housing:
i4-Pac
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IRM
max. reverse recovery current
IF
=A;60
VR
=V600
T=VJ
100°C
-diF/dt
=A/μs600
trr
TVJ
=°C25
T=VJ
100°C
48
thermal resistance junction to case
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
average forward current
IXYS reserves the right to change limits, conditions and dimensions.
?
2011 IXYS all rights reserved
20110215a
Data according to IEC 60747and per diode unless otherwise specified
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